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| SHINDENGEN Super Fast Recovery Rectifiers Super Fast Bridges D4SBL40 400V 4A FEATURES *oe noise Low *oe Package SIL *oe High IFSM APPLICATION OUTLINE DIMENSIONS Case : 3S (Unit : mm) *oe power supply Switching *oe ome (Electrical) Appliances Home H *oe ffice Equipment, Telecommunication, Office O Factory Automation RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 400 V IO 50Hz Average Rectified Forward Current sine wave, R-load With heatsink Tc=91*Z 4 A 50Hz sine wave, R-load Without heatsink Ta=25*Z.95 1 IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 *Z A Peak Surge Forward Current 50 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR * ecommended torque*0.5Nm*j R i F 0.8 Nm *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions VF IF Forward Voltage =2.5A, Pulse measurement, Rating of per diode IR V =V , Pulse measurement, Rating of per diode Reverse Current R RM = Reverse Recovery Time trr IF= 0.5A,RI 1A AEjc junction to case * * With heatsink @@ Thermal Resistance AEjl junction to lead * * Without heatsink @@ AEjajunction to ambient Without heatsink Ratings Unit Max.1.3 V Max.10 EA Max.50 ns Max.5.5 Max.6 *Z/W Max.30 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D4SBL40 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.5 1 1.5 2 2.5 3 Forward Voltage VF [V] D4SBL40 Junction Capacitance f=1MHz Tc=25C TYP per diode 100 Junction Capacitance Cj [pF] 10 1 10 1 100 Reverse Voltage VR [V] D4SBL40 16 Forward Power Dissipation DC 14 D=0.8 0.5 SIN 0.3 0.2 0.1 0.05 Forward Power Dissipation PF [W] 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 Average Rectified Forward Current IO [A] Tj = 150C 0 IO tp D=tp /T T D4SBL40 8 Derating Curve Heatsink Tc Tc Average Rectified Forward Current IO [A] 7 DC 6 5 4 3 2 1 0 D=0.8 0.5 SIN 0.3 0.2 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM 0 0 IO VR tp D=tp /T T D4SBL40 3 Derating Curve Average Rectified Forward Current IO [A] DC 2.5 0.5 2 SIN 0.3 1.5 0.2 0.1 0.05 0.5 D=0.8 Glass-epoxy substrate Soldering land 5mm 1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM Sine wave R-load Free in air IO 0 0 VR tp D=tp /T T D4SBL40 80 Peak Surge Forward Capability IFSM 70 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 60 non-repetitive, sine wave, Tj=25C before surge current is applied 50 40 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] |
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